Location: Tanzania, Africa & Central Kalimantan, Indonesia Ore Type: Low-Grade Sulfide Ore (1.2–1.8 g/t Au)
Fast investment return with integrated cell production system and mature technology
We have carefully selected a batch of second-hand equipment of very good quality. Compared with new equipment, they have obvious price advantages and will not make much difference in use.
Perk Technology
Include: Monocrystalline Batch Texturing Equipment, Batch Texturing Loader/Unloader,Low-Pressure Soft-Landing Closed-Tube Diffusion System…
TOPCon Technology
Such as: Boron diffusion furnace, BSG removal, Alkali polishing machine, PE-POLY…
Our company has a professional team and rich experience, and can provide you with the best service
Project strategy
Project proposal
Site selection plan
Feasible study report Project implement plan Safety production assessment
Civil structure
Process supply system
Mechanic and HVAC
Environmental protection and safety
3D piping design
On-site erection & commissioning and first year operation.
First year Plant operation
Technology training
Monocrystalline cells are divided into P-type and N-type according to the doping type of silicon wafers. P-type silicon wafers are made by doping boron in silicon materials, while N-type silicon wafers are made by doping phosphorus in silicon materials.
| Aspect | PERC | TOPCon | HJT |
|---|---|---|---|
| Passivation | Al₂O₃/SiNx rear passivation | SiO₂ + poly-Si passivated contact | a-Si/c-Si heterojunction passivation |
| Key Process Steps | Front Side: Phosphorus diffusion to form the n+ emitter, followed by screen-printed silver grid lines. Rear Side: Deposits aluminum oxide (passivation layer) + silicon nitride (protective layer). Laser grooving (local contact) followed by aluminum back field printing. | Front Side: Similar to PERC (phosphorus diffusion + screen printing). Rear Side: Grows a 1-2 nm tunneling oxide layer (SiO₂). Deposits phosphorus-doped amorphous silicon, annealed to form n+ polysilicon layer. Coats with SiNx, then screen-prints electrodes. | Cleaning & Texturing: Double-sided texturing (requires extremely high cleanliness). Deposition: Deposits intrinsic amorphous silicon (i-a-Si) passivation layers on both sides. Deposits p-type a-Si on the front and n-type a-Si on the rear (forming the heterojunction). TCO (Transparent Conductive Oxide) Layer: Deposits ITO (Indium Tin Oxide) or similar materials. Metallization: Low-temperature silver paste + screen printing (or copper plating). |
| Metallization | High-temp silver paste (>700°C) | High-temp silver paste | Low-temp silver paste (<200°C) |
| Process Temp. | High (>800°C) | High (annealing >900°C) | Low (<200°C) |
| TCO Layer | Not required | Not required | Required (ITO, etc.) |
| Efficiency | ~24% | ~26% | ~27%+ |
| Cost | Lowest | Moderate | Highest (equipment + materials) |
Location: Tanzania, Africa & Central Kalimantan, Indonesia Ore Type: Low-Grade Sulfide Ore (1.2–1.8 g/t Au)
Client: Heavy Mineral Sands Producer Feedstock: Ilmenite Concentrate (TiO₂ 52-55%) Final Product: Rutile-Grade TiO₂ (≥94% purity)
Raw Material: Quartzite Rock (SiO₂: 97.8%) Photovoltaic Grade: SiO₂≥99.99%, Fe₂O₃≤10ppm
Raw Ore: Lithium-Rich Hectorite Clay (Li₂O: 0.6-1.0%) Final Product: Battery-Grade Lithium Carbonate
Raw Ore: Porphyry Gold-Copper Ore Gold Grade: 0.8-1.5 g/t Copper Grade: 0.6-0.9%
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3000 TPD Gold Flotation Project in Shandong Province
2500TPD Lithium Ore Flotation in Sichuan
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