The chemical etching process forms pyramidal textures or inverted pyramid structures on silicon wafer surfaces, significantly enhancing light absorption efficiency in photovoltaic cells. This critical manufacturing process is essential for improving solar cell conversion efficiency.
Cleaning raw silicon wafers and fabricating light-trapping textured surfaces
Manufacturer: S.C.
P+ Layer Formation for PN Junction: Using BCl₃ at high temperatures to form a P+ layer on the silicon wafer surface, thereby creating a PN junction that enables carrier generation in the wafer.
N-type Cell Junction Formation Method: The junction formation process for N-type cells involves diffusing boron (B) into phosphorus-doped semiconductor material, creating a P-N junction at the interface between the two doped semiconductor regions.
Manufacturer: S.C.
Phosphosilicate Glass (PSG) Removal Using HF
Reaction: SiO2+HF-H2SiF6+H2O
Selective Surface Passivation & Polishing Mechanism:
“Protective groups” (e.g., silane-based compounds) form an ordered monolayer on the oxide surface:
Creates OH⁻ diffusion barrier → Prevents SiO₂ etching
Accelerates OH⁻ reaction with backside Si → Enhances anisotropic etching on {111}/{100} planes
Manufacturer: S.C.
Oxide Layer Deposition Principle: Thermal oxidation via oxygen diffusion at elevated temperatures, where oxygen reacts with silicon to form silicon oxide.
Chemical Reaction: O2+SiSiOx。
Amorphous Silicon (a-Si) Deposition Principle: Thermal decomposition of silane (SiH₄) in CVD process, producing solid-phase silicon and hydrogen byproducts.
Chemical Reaction: SiH₄(g) → Si(s) + 2H₂(g)
Manufacturer: S.C.
The P2O5 produced by the decomposition of POCl3 is deposited on the surface of the silicon wafer. P2O5 reacts with silicon to generate SiO2 and phosphorus atoms, and forms a layer of phosphosilicate glass on the surface of the silicon wafer. The phosphorus atoms then diffuse into the silicon.
Reaction： 2P2O5+5Si=5SiO2+4P↓
Manufacturer: S.C.
Inline Wet Etching for PSG Removal (Back & Sidewalls)
Process: Chain-type wet station uses HF-based chemistry to remove phosphosilicate glass (PSG) from wafer backside and edges before RCA cleaning.
The “protective groups” are selectively arranged in an orderly manner to enhance the protection of BPSG. After removing PSG on the POLY surface using an alkali polishing process, aOH+ADD is used to successfully protect SiO2 from being corroded by NaOH.
Manufacturer: S.C.
Atomic Layer Deposition (ALD) for Surface Passivation Principle: ALD enables layer-by-layer deposition of atomic-scale thin films. Using Al₂O₃’s negative fixed charges, it creates an interface electric field directed toward the silicon bulk. This field:
Repels electrons from the Al₂O₃/Si interface in n-type silicon
Reduces interface recombination velocity (Seff < 10 cm/s)
Enhances minority carrier lifetime (Δτ > 1 ms)
Al₂O₃ Deposition via TMA Precursor Reaction Mechanism: Trimethylaluminum (TMA) reacts with water vapor in a cyclic process:
2AL(CH3)3 + 3H2O = Al2O3 + 6CH4
Manufacturer: S.C.
Low-temperature plasma serves as the energy source, with the silicon wafer placed on the cathode under low-pressure glow discharge. The wafer is heated to a predetermined temperature through glow discharge (or an additional heating element). An appropriate amount of SiH₄ and NH₃ is then introduced, undergoing a series of chemical and plasma reactions to form a solid thin film (SiNₓ) on the front surface of the silicon wafer.
Manufacturer: S.C.
Using low-temperature plasma as the energy source, the silicon wafer is placed on the cathode of a low-pressure glow discharge system. The wafer is heated to a predetermined temperature through glow discharge (or with an additional heating element). An appropriate amount of SiH₄ and NH₃ is then introduced, undergoing a series of chemical and plasma reactions to form a solid thin film (SiNₓ) on the back surface of the silicon wafer.
Manufacturer: S.C.
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